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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1506 DESCRIPTION *With TO-126 package *Complement to type 2SB1065 *Low collector saturation voltage APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 3 4.5 10 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1506 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0 50 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=50A ,IE=0 IE=50A ,IC=0 60 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V A A ICBO Collector cut-off current VCB=40V; IE=0 1.0 IEBO Emitter cut-off current VEB=4V; IC=0 1.0 hFE COB DC current gain IC=0.5A ; VCE=3V IE=0 ; VCB=10V,f=1MHz 56 390 Output capacitance 40 pF fT Transition frequency IC=0.5A ; VCE=5V 90 MHz hFE Classifications N 56-120 P 82-180 Q 120-270 R 180-390 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1506 Fig.2 Outline dimensions 3 |
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